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Shanghai GaNova Electronic Information Co., Ltd.

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Home / Products / GaN Epitaxial Wafer / 10*10.5mm2 C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Macro Defect Density 0cm⁻² TTV ≤ 10 Μm Resistivity 10⁶ Ω·Cm RF Devices Wafer /

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Shanghai GaNova Electronic Information Co., Ltd.
City:shanghai
Province/State:shanghai
Country/Region:china
Contact Person:Xiwen Bai (Ciel)
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10*10.5mm2 C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Macro Defect Density 0cm⁻² TTV ≤ 10 Μm Resistivity 10⁶ Ω·Cm RF Devices Wafer
10*10.5mm2 C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Macro Defect Density 0cm⁻² TTV ≤ 10 Μm Resistivity 10⁶ Ω·Cm RF Devices Wafer
  • 10*10.5mm2 C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Macro Defect Density 0cm⁻² TTV ≤ 10 Μm Resistivity 10⁶ Ω·Cm RF Devices Wafer
  • 10*10.5mm2 C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Macro Defect Density 0cm⁻² TTV ≤ 10 Μm Resistivity 10⁶ Ω·Cm RF Devices Wafer
  • 10*10.5mm2 C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Macro Defect Density 0cm⁻² TTV ≤ 10 Μm Resistivity 10⁶ Ω·Cm RF Devices Wafer
  • 10*10.5mm2 C-Face Fe-Doped SI-Type Free-Standing GaN Single Crystal Substrate Macro Defect Density 0cm⁻² TTV ≤ 10 Μm Resistivity 10⁶ Ω·Cm RF Devices Wafer
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10*10.5mm2 C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview We sell directly from ...
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Product Tags:
gaas substrate cob smd led chip aluminum base led mcpcb

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