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GaN Epitaxial Wafer

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Shanghai GaNova Electronic Information Co., Ltd.
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City:shanghai
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Contact Person:Xiwen Bai (Ciel)
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 GaN Epitaxial Wafer

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The growth characteristics of Fe-doped GaN ...
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Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe......
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2 inch Free-standing SI-GaN Substrates

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices To reduce the Fe trapping carrier and the ....
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Gallium Nitride Semiconductor Wafer 325um 375um C Plane

2-inch Free-standing SI-GaN Substrates An epitaxial wafer (also called epi wafer, epi-wafer, or epiwafer) is a wafer of semiconducting material made ....
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375 um GaN Epitaxial Wafer Free Standing U-GaN SI-GaN Substrates

350 ± 25 μm (11-20) ± 3o, 8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates 2inch C-face Un-doped n-type free-standing GaN single crystal ...
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2 Inch U GaN Substrates SI GaN Substrates 50.8mm

2-inch Free-standing U-GaN/SI-GaN Substrates 350 ± 25 μm 50.8 ± 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate ...
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Single Crystal GaN Epitaxial Wafer 2inch C Face Un Doped N Type

2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview High-quality GaN free...
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50.8mm Gallium Nitride Semiconductor Wafer 2 Inch Free Standing

50.8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates (1-100) ± 0.5o, 16 ± 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal ......
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Free Standing U / SI GaN Epitaxial Wafer 50.8 mm 350 um

2-inch Free-standing U-GaN/SI-GaN Substrates 50.8 ± 1 mm 350 ± 25 μm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate ...
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SP Face 5 X 10mm2 Gallium Nitride Substrate 350um

5 x 10mm2 Free-standing GaN Substrates 350 ±25 µm From 1 x 105 to 3 x 106 cm-2 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN ......
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