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Silicon Carbide Crystal

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Shanghai GaNova Electronic Information Co., Ltd.
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 Silicon Carbide Crystal

Primary Flat Lengh 32.5mm Silicon Carbide Crystal 4" P Grade 100.0mm

Primary Flat Lengh 32.5mm±2.0mm SiC Seed Crystal 4" P Grade 100.0mm±0.5mm 0.015~0.028ohm.cm SiC Seed Crystal 4" PGrade SiC can withstand a voltage ......
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4H Politype Single Crystal Silicon Carbide 4" P Grade Si Face

JDZJ01-001-001 SiC Seed Crystal 4" P Grade Si-Face 90°Cw.From Primary Flat±5° SiC Seed Crystal 4" PGrade The physical and electronic properties of SiC ...
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0.015ohm.cm To 0.028ohm.cm Silicon Carbide Crystal N Type

0.015~0.028ohm.Cm SiC Seed Crystal 4" P Grade N-Type Orientation 4.0°±0.2° SiC Seed Crystal 4" PGrade SiC CRYSTAL is an ultra-high purity silicon ......
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100.0mm Silicon Carbide Crystal 4" P Grade 18.0mm

100.0mm±0.5mm SiC Seed Crystal 4" P Grade 0.015~0.028ohm.cm 18.0mm±2.0mm SiC Seed Crystal 4" PGrade Electronic devices formed in SiC can operate at .....
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100.0mm Silicon Carbide Crystal 4" P Grade Politype 4H

100.0mm±0.5mm SiC Seed Crystal 4" P Grade 4.0°±0.2° Politype 4H SiC Seed Crystal 4" PGrade SiC can withstand a voltage gradient (or electric field) .....
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4" P Grade Silicon Carbide Crystal Resistivity 0.015ohm.cm To 0.028ohm.cm

4" P Grade SiC Seed Crystal Resistivity 0.015~0.028ohm.Cm 32.5mm±2.0mm SiC Seed Crystal 4" PGrade SiC is an excellent thermal conductor. Heat will ......
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JDZJ01-001-002 SiC Ingot Crystal 4" D Grade

SiC ingot crystal 4" P grade SiC devices can operate at high frequencies (RF and microwave) because of the high saturated electron drift velocity of ....
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JDZJ01-001-004 SiC Ingot Crystal 6" P grade

SiC ingot crystal 6" Pgrade Silicon carbide, exceedingly hard, synthetically produced crystalline compound of silicon and carbon. Its chemical formula ...
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JDZJ01-001-005 SiC Seed Crystal S Grade 6" S Grade φ153±0.5mm

SiC seed crystal S grade 6" S grade φ153±0.5mm SiC is an excellent thermal conductor. Heat will flow more readily through SiC than other semiconductor ...
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JDZJ01-001-007 Silicon Carbide Seed Crystal

JDZJ01-001-007 Silicon Carbide Seed Crystal Electronic devices formed in SiC can operate at extremely high temperatures without suffering from ...
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