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GaN Epitaxial Wafer

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SiC Epitaxial Wafer

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GaAs Epi Wafer

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CVD Diamond Substrates

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Rapid Thermal Annealing System

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Hall Effect Sensor Tester

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Aluminum Nitride Wafer

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Laser Diode Chip

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Silicon Carbide Crystal

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Ga2O3 Wafer

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Silicon Wafer

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Sapphire Wafer

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Patterned Sapphire Substrates

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Wafer Holder

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Wafer Dicing Machine

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Shanghai GaNova Electronic Information Co., Ltd.
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China 2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing for sale VIDEO

2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The growth characteristics of Fe-doped GaN ...
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China Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um for sale

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0μm± 25.0 μm JDCD03-001-004 Overview The 200-mm wafers can be used for a variety of applications...
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China Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices for sale VIDEO

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe......
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China 6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um for sale

6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um

6inch 4H-SiC substrate N-Type P-MOS Grade 350.0±25.0μm MPD≤0.2/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview SiC is ......
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China 2 inch Free-standing SI-GaN Substrates for sale VIDEO

2 inch Free-standing SI-GaN Substrates

2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices To reduce the Fe trapping carrier and the ....
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China 4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um for sale

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

JDCD03-001-004 SiC Epitaxial Wafer Wafer Edge Beveling 350.0μm± 25.0 μm JDCD03-001-004 Overview Several methods of growing the epitaxial layer on ......
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China Gallium Nitride Semiconductor Wafer 325um 375um C Plane for sale VIDEO

Gallium Nitride Semiconductor Wafer 325um 375um C Plane

2-inch Free-standing SI-GaN Substrates An epitaxial wafer (also called epi wafer, epi-wafer, or epiwafer) is a wafer of semiconducting material made ....
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China P Level SI Type 6inch 4H SiC Semi Insulating Substrate 150mm for sale

P Level SI Type 6inch 4H SiC Semi Insulating Substrate 150mm

P-Level SI-Type 6inch 4H-SiC Semi insulating substrate 350.0±25.0μm MPD≤0.5/cm2 Resistivity≥1E9Ω·cm 6inch 4H-SiC substrate P-level SI-Type 350.0±25.0....
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China 375 um GaN Epitaxial Wafer Free Standing U-GaN SI-GaN Substrates for sale VIDEO

375 um GaN Epitaxial Wafer Free Standing U-GaN SI-GaN Substrates

350 ± 25 μm (11-20) ± 3o, 8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates 2inch C-face Un-doped n-type free-standing GaN single crystal ...
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China 4H SiC Epitaxial Wafer P-MOS Grade 150.0 mm +0mm/-0.2mm 47.5 mm ± 1.5 mm for sale

4H SiC Epitaxial Wafer P-MOS Grade 150.0 mm +0mm/-0.2mm 47.5 mm ± 1.5 mm

JDCD03-001-003 Overview A SiC wafer is a semiconductor material that has excellent electrical and thermal properties. It is a high-performance ...
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