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SiC Epitaxial Wafer

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 SiC Epitaxial Wafer
China Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um for sale

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0um± 25.0 um

Beveling SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm 350.0μm± 25.0 μm JDCD03-001-004 Overview The 200-mm wafers can be used for a variety of applications...
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China 6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um for sale

6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um

6inch 4H-SiC substrate N-Type P-MOS Grade 350.0±25.0μm MPD≤0.2/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview SiC is ......
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China 4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um for sale

4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um

JDCD03-001-004 SiC Epitaxial Wafer Wafer Edge Beveling 350.0μm± 25.0 μm JDCD03-001-004 Overview Several methods of growing the epitaxial layer on ......
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China P Level SI Type 6inch 4H SiC Semi Insulating Substrate 150mm for sale

P Level SI Type 6inch 4H SiC Semi Insulating Substrate 150mm

P-Level SI-Type 6inch 4H-SiC Semi insulating substrate 350.0±25.0μm MPD≤0.5/cm2 Resistivity≥1E9Ω·cm 6inch 4H-SiC substrate P-level SI-Type 350.0±25.0....
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China 4H SiC Epitaxial Wafer P-MOS Grade 150.0 mm +0mm/-0.2mm 47.5 mm ± 1.5 mm for sale

4H SiC Epitaxial Wafer P-MOS Grade 150.0 mm +0mm/-0.2mm 47.5 mm ± 1.5 mm

JDCD03-001-003 Overview A SiC wafer is a semiconductor material that has excellent electrical and thermal properties. It is a high-performance ...
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China 150mm 4H SiC Wafer Semi Insulating Substrate 6inch 350μm for sale

150mm 4H SiC Wafer Semi Insulating Substrate 6inch 350μm

6inch 4H-SiC substrate D-level SI-Type 350.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave devices Overview Sized for improved ......
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China 150.0mm +0mm/-0.2mm SiC Epitaxial Wafer No Secondary Flat 3mm for sale VIDEO

150.0mm +0mm/-0.2mm SiC Epitaxial Wafer No Secondary Flat 3mm

JDCD03-001-003 Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into substrates, which are subsequently polished. A ...
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China N Type 6inch 4H Silicon Carbide Substrate Primary Flat Length 47.5mm for sale

N Type 6inch 4H Silicon Carbide Substrate Primary Flat Length 47.5mm

6inch 4H-SiC substrate N-Type D Grade 350.0±25.0μm MPD≤5/cm2 Resistivity 0.014Ω•cm—0.028Ω•cm for power and microwave devices Overview Silicon Carbide ...
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China 47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to±1° for sale VIDEO

47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to<11-20>±1°

47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to<11-20>±1° JDCD03-001-003 Overview Currently, there are two main types of SiC ......
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China 6inch 4H SiC Substrate N Type P SBD Grade 350μm for sale

6inch 4H SiC Substrate N Type P SBD Grade 350μm

6inch 4H-SiC substrate N-Type P-SBD Grade 350.0±25.0μm MPD≤0.5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview SiC boules ...
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