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Home / Products / GaN Epitaxial Wafer / 5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser /

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Shanghai GaNova Electronic Information Co., Ltd.
City:shanghai
Province/State:shanghai
Country/Region:china
Contact Person:Xiwen Bai (Ciel)
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser

5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate  Resistivity < 0.05 Ω·cm Power device/laser
  • 5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate  Resistivity < 0.05 Ω·cm Power device/laser
  • 5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate  Resistivity < 0.05 Ω·cm Power device/laser
  • 5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate  Resistivity < 0.05 Ω·cm Power device/laser
  • 5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate  Resistivity < 0.05 Ω·cm Power device/laser
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Power density is ...
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