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Shanghai GaNova Electronic Information Co., Ltd.

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Home / Products / GaN Epitaxial Wafer / 4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer /

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GaN Epitaxial Wafer

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SiC Epitaxial Wafer

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GaAs Epi Wafer

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CVD Diamond Substrates

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Rapid Thermal Annealing System

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Hall Effect Sensor Tester

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Aluminum Nitride Wafer

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Laser Diode Chip

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Silicon Carbide Crystal

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Ga2O3 Wafer

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Silicon Wafer

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Sapphire Wafer

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Patterned Sapphire Substrates

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Wafer Holder

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Wafer Dicing Machine

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Shanghai GaNova Electronic Information Co., Ltd.
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4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer
4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer
  • 4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer
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4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10Ω cm LED, laser, PIN epitaxial wafer Why Use GaN Wafers? Gallium Nitride on sapphire is ...
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