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Shanghai GaNova Electronic Information Co., Ltd.

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Home / Products / GaN Epitaxial Wafer / 4 Inch P-Type Mg-Doped GaN On Sapphire Wafer SSP Resistivity~10Ω Cm LED Laser PIN Epitaxial Wafer /

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GaN Epitaxial Wafer

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SiC Epitaxial Wafer

 [42]

GaAs Epi Wafer

 [15]

CVD Diamond Substrates

 [15]

Rapid Thermal Annealing System

 [2]

Hall Effect Sensor Tester

 [3]

Aluminum Nitride Wafer

 [21]

Laser Diode Chip

 [10]

Silicon Carbide Crystal

 [12]

Ga2O3 Wafer

 [13]

Silicon Wafer

 [26]

Sapphire Wafer

 [19]

Patterned Sapphire Substrates

 [10]

Wafer Holder

 [1]

Wafer Dicing Machine

 [5]
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Shanghai GaNova Electronic Information Co., Ltd.
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Contact Person:Xiwen Bai (Ciel)
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4 Inch P-Type Mg-Doped GaN On Sapphire Wafer SSP Resistivity~10Ω Cm LED Laser PIN Epitaxial Wafer
4 Inch P-Type Mg-Doped GaN On Sapphire Wafer SSP Resistivity~10Ω Cm LED Laser PIN Epitaxial Wafer
  • 4 Inch P-Type Mg-Doped GaN On Sapphire Wafer SSP Resistivity~10Ω Cm LED Laser PIN Epitaxial Wafer
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4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10Ω cm LED, laser, PIN epitaxial wafer The electrical properties of p-type Mg-doped GaN ...
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