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Shanghai GaNova Electronic Information Co., Ltd.

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Home / Products / GaN Epitaxial Wafer / GaN Gallium Nitride Wafer Thickness 325um - 375um Freestanding /

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Shanghai GaNova Electronic Information Co., Ltd.
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GaN Gallium Nitride Wafer Thickness 325um - 375um Freestanding
GaN Gallium Nitride Wafer Thickness 325um - 375um Freestanding
  • GaN Gallium Nitride Wafer Thickness 325um - 375um Freestanding
Products Detailed
5*10.5mm2 M Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10.5mm2 M-face Un-doped SI-type free-standing GaN single crystal substrate ...
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Product Tags:
gallium nitride wafer gallium arsenide wafer pcb electronik

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