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Shanghai GaNova Electronic Information Co., Ltd.

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Home / Products / GaN Epitaxial Wafer / 2 inch Free-standing SI-GaN Substrates /

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GaN Epitaxial Wafer

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SiC Epitaxial Wafer

 [42]

GaAs Epi Wafer

 [15]

CVD Diamond Substrates

 [15]

Rapid Thermal Annealing System

 [2]

Hall Effect Sensor Tester

 [3]

Aluminum Nitride Wafer

 [21]

Laser Diode Chip

 [10]

Silicon Carbide Crystal

 [12]

Ga2O3 Wafer

 [13]

Silicon Wafer

 [26]

Sapphire Wafer

 [19]

Patterned Sapphire Substrates

 [10]

Wafer Holder

 [1]

Wafer Dicing Machine

 [5]
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Shanghai GaNova Electronic Information Co., Ltd.
City:shanghai
Province/State:shanghai
Country/Region:china
Contact Person:Xiwen Bai (Ciel)
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2 inch Free-standing SI-GaN Substrates
2 inch Free-standing SI-GaN Substrates
  • 2 inch Free-standing SI-GaN Substrates
Products Detailed
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices To reduce the Fe trapping carrier and the ...
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Product Tags:
fr4 substrate for boards gaas substrate aluminum base led mcpcb

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