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Shanghai GaNova Electronic Information Co., Ltd.
City:shanghai
Province/State:shanghai
Country/Region:china
Contact Person:Xiwen Bai (Ciel)
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Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices

Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices
  • Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices
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2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe...
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