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Shanghai GaNova Electronic Information Co., Ltd.

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Home / Products / GaN Epitaxial Wafer / 2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing /

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Shanghai GaNova Electronic Information Co., Ltd.
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2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing
2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing
  • 2inch GaN Epitaxial Wafer C Face Fe Doped SI Type Free Standing
Products Detailed
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The growth characteristics of Fe-doped GaN ...
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specs p3 led wall p3 led wall specifications fr4 design pcb

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