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Shanghai GaNova Electronic Information Co., Ltd.

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Home / Products / SiC Epitaxial Wafer / 4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave /

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GaN Epitaxial Wafer

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SiC Epitaxial Wafer

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GaAs Epi Wafer

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CVD Diamond Substrates

 [15]

Rapid Thermal Annealing System

 [2]

Hall Effect Sensor Tester

 [3]

Aluminum Nitride Wafer

 [21]

Laser Diode Chip

 [10]

Silicon Carbide Crystal

 [12]

Ga2O3 Wafer

 [13]

Silicon Wafer

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Sapphire Wafer

 [19]

Patterned Sapphire Substrates

 [10]

Wafer Holder

 [1]

Wafer Dicing Machine

 [5]
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Shanghai GaNova Electronic Information Co., Ltd.
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4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave
4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave
  • 4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave
Products Detailed
JDCD03-002-002 4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave devices Overview SiC is used for ...
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Product Tags:
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