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Shanghai GaNova Electronic Information Co., Ltd.

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Home / Products / SiC Epitaxial Wafer / 4 Inch 4H-SiC Substrate P-Level SI 500.0±25.0μM MPD≤0.3/Cm2 Resistivity≥1E9Ω·Cm For Power Microwave /

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GaN Epitaxial Wafer

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SiC Epitaxial Wafer

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GaAs Epi Wafer

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CVD Diamond Substrates

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Rapid Thermal Annealing System

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Hall Effect Sensor Tester

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Aluminum Nitride Wafer

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Laser Diode Chip

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Silicon Carbide Crystal

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Ga2O3 Wafer

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Silicon Wafer

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Sapphire Wafer

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Patterned Sapphire Substrates

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Wafer Holder

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Wafer Dicing Machine

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Shanghai GaNova Electronic Information Co., Ltd.
City:shanghai
Province/State:shanghai
Country/Region:china
Contact Person:Xiwen Bai (Ciel)
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4 Inch 4H-SiC Substrate P-Level SI 500.0±25.0μM MPD≤0.3/Cm2 Resistivity≥1E9Ω·Cm For Power Microwave
4 Inch 4H-SiC Substrate P-Level SI 500.0±25.0μM MPD≤0.3/Cm2 Resistivity≥1E9Ω·Cm For Power Microwave
  • 4 Inch 4H-SiC Substrate P-Level SI 500.0±25.0μM MPD≤0.3/Cm2 Resistivity≥1E9Ω·Cm For Power Microwave
Products Detailed
JDCD03-002-001 4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤0.3/cm2 Resistivity≥1E9Ω·cm for power and microwave devices Overview SiC has higher ...
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Product Tags:
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