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Shanghai GaNova Electronic Information Co., Ltd.

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Home / Products / SiC Epitaxial Wafer / 4H SiC Epitaxial Wafer SiC Wafer Substrate For Photonic Devices ISO9001 /

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GaN Epitaxial Wafer

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SiC Epitaxial Wafer

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GaAs Epi Wafer

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CVD Diamond Substrates

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Rapid Thermal Annealing System

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Hall Effect Sensor Tester

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Aluminum Nitride Wafer

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Laser Diode Chip

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Silicon Carbide Crystal

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Ga2O3 Wafer

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Silicon Wafer

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Sapphire Wafer

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Patterned Sapphire Substrates

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Wafer Holder

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Wafer Dicing Machine

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Shanghai GaNova Electronic Information Co., Ltd.
City:shanghai
Province/State:shanghai
Country/Region:china
Contact Person:Xiwen Bai (Ciel)
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4H SiC Epitaxial Wafer SiC Wafer Substrate For Photonic Devices ISO9001
4H SiC Epitaxial Wafer SiC Wafer Substrate For Photonic Devices ISO9001
  • 4H SiC Epitaxial Wafer SiC Wafer Substrate For Photonic Devices ISO9001
Products Detailed
4H SiC Epitaxial Wafer ≤0.2 /Cm2 150.0 Mm +0mm/-0.2mm 47.5 Mm ± 1.5 Mm JDCD03-001-004 Overview An epitaixal wafer is a wafer of semiconducting ...
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polarization film base ceramic catalyst substrate sigma ceramics silicon carbide density

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