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Shanghai GaNova Electronic Information Co., Ltd.

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Home / Products / SiC Epitaxial Wafer / 150.0 mm + 0mm / -0.2mm SiC Epitaxial Wafer 4H Crystal Form /

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Shanghai GaNova Electronic Information Co., Ltd.
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150.0 mm + 0mm / -0.2mm SiC Epitaxial Wafer 4H Crystal Form
150.0 mm + 0mm / -0.2mm SiC Epitaxial Wafer 4H Crystal Form
  • 150.0 mm + 0mm / -0.2mm SiC Epitaxial Wafer 4H Crystal Form
Products Detailed
150.0 mm +0mm/-0.2mm Sic Epitaxial Wafer Off-Axis:4°Toward <11-20>±0.5 ° JDCD03-001-004 Overview A SiC wafer is a semiconductor made of silicon. Its ...
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ceramics silicon carbide density gallium arsenide wafer silicon carbide crucible sizes

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