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Shanghai GaNova Electronic Information Co., Ltd.

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Home / Products / SiC Epitaxial Wafer / 260μm Silicon Carbide Substrate P Level For Power Devices And Microwave Devices /

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Silicon Carbide Crystal

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Wafer Holder

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Shanghai GaNova Electronic Information Co., Ltd.
City:shanghai
Province/State:shanghai
Country/Region:china
Contact Person:Xiwen Bai (Ciel)
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260μm Silicon Carbide Substrate P Level For Power Devices And Microwave Devices
260μm Silicon Carbide Substrate P Level For Power Devices And Microwave Devices
  • 260μm Silicon Carbide Substrate P Level For Power Devices And Microwave Devices
Products Detailed
4H-N/SI<0001>260μm±25μm 2-Inch SiC Substrate P-Level For Power Devices And Microwave Devices JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI<0001...
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Product Tags:
silicon carbide wafer metallic substrate catalytic converter silicon carbide density

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