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Home / Products / SiC Epitaxial Wafer / 2 Inch SiC Substrate 350μm For Demanding Power Electronics /

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Shanghai GaNova Electronic Information Co., Ltd.
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2 Inch SiC Substrate 350μm For Demanding Power Electronics
2 Inch SiC Substrate 350μm For Demanding Power Electronics
  • 2 Inch SiC Substrate 350μm For Demanding Power Electronics
Products Detailed
P-Level 2-Inch SiC Substrate 4H-N/SI<0001>260μm±25μm For Demanding Power Electronics JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI<0001>260μm±25...
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silicon carbide wafer semiconductor wafer smd inductor sizes

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