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Shanghai GaNova Electronic Information Co., Ltd.

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Home / Products / SiC Epitaxial Wafer / 6inch 4H SiC Substrate N Type P SBD Grade 350μm /

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Ga2O3 Wafer

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Wafer Holder

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Shanghai GaNova Electronic Information Co., Ltd.
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Contact Person:Xiwen Bai (Ciel)
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6inch 4H SiC Substrate N Type P SBD Grade 350μm
6inch 4H SiC Substrate N Type P SBD Grade 350μm
  • 6inch 4H SiC Substrate N Type P SBD Grade 350μm
Products Detailed
6inch 4H-SiC substrate N-Type P-SBD Grade 350.0±25.0μm MPD≤0.5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview SiC boules ...
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Product Tags:
vdk aluminum profile ltcc substrate lp1325 aluminium channel

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