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Home / Products / SiC Epitaxial Wafer / N Type 6inch 4H Silicon Carbide Substrate Primary Flat Length 47.5mm /

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Shanghai GaNova Electronic Information Co., Ltd.
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N Type 6inch 4H Silicon Carbide Substrate Primary Flat Length 47.5mm
N Type 6inch 4H Silicon Carbide Substrate Primary Flat Length 47.5mm
  • N Type 6inch 4H Silicon Carbide Substrate Primary Flat Length 47.5mm
Products Detailed
6inch 4H-SiC substrate N-Type D Grade 350.0±25.0μm MPD≤5/cm2 Resistivity 0.014Ω•cm—0.028Ω•cm for power and microwave devices Overview Silicon Carbide ...
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Product Tags:
structure of silicon carbide silicon carbide structure silicon carbide sheet 180

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