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Home / Products / SiC Epitaxial Wafer / 4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um /

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Shanghai GaNova Electronic Information Co., Ltd.
City:shanghai
Province/State:shanghai
Country/Region:china
Contact Person:Xiwen Bai (Ciel)
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4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um
4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um
  • 4H Crystal Form SiC Epitaxial Wafer Wafer Edge Beveling 350.0um ± 25.0um
Products Detailed
JDCD03-001-004 SiC Epitaxial Wafer Wafer Edge Beveling 350.0μm± 25.0 μm JDCD03-001-004 Overview Several methods of growing the epitaxial layer on ...
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silicon carbide wafer standard tungsten carbide edges structure of silicon carbide

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