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Shanghai GaNova Electronic Information Co., Ltd.

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Home / Products / SiC Epitaxial Wafer / 6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um /

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Shanghai GaNova Electronic Information Co., Ltd.
City:shanghai
Province/State:shanghai
Country/Region:china
Contact Person:Xiwen Bai (Ciel)
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6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um
6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um
  • 6inch N Type Wafer P MOS Grade 4H SiC Substrate 350.0 ± 25.0um
Products Detailed
6inch 4H-SiC substrate N-Type P-MOS Grade 350.0±25.0μm MPD≤0.2/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview SiC is ...
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Product Tags:
6063 t5 aluminum composition 96% al2o3 ceramic substrate aluminium section 6063 properties

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