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Shanghai GaNova Electronic Information Co., Ltd.

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Home / Products / Silicon Carbide Crystal / 4" P Grade Silicon Carbide Crystal Resistivity 0.015ohm.cm To 0.028ohm.cm /

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Shanghai GaNova Electronic Information Co., Ltd.
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City:shanghai
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Contact Person:Xiwen Bai (Ciel)
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4" P Grade Silicon Carbide Crystal Resistivity 0.015ohm.cm To 0.028ohm.cm
4
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4" P Grade SiC Seed Crystal Resistivity 0.015~0.028ohm.Cm 32.5mm±2.0mm SiC Seed Crystal 4" PGrade SiC is an excellent thermal conductor. Heat will ...
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Product Tags:
tungsten carbide resistivity silicon carbide properties ceramics silicon carbide density

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