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10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM<350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters
Ga2O3 has a long history and the phase equilibria of the Al2O3-Ga2O3-H2O system was first reported in 1952 1 , in which the polymorphs (ie, different forms or crystal structures) of Ga2O3 and their regions of stability were also identified.
There are five commonly identified polymorphs of Ga2O3, labeled as α, β, γ, δ and ε 2-10. These are known, respectively as corundum (α), monoclinic (β), defective spinel (γ), orthorhombic (ε), with the δ phase commonly accepted as being a form of the orthorhombic phase.
Gallium nitride substrate--Product level | ||
Dimensions | 10*15mm | 10*10mm |
Thickness | 0.6~0.8mm | |
Orientation | (201) | |
Doping | Fe | Sn |
Polished surface | Single side polished | |
Resistivity/Nd-Na | / | <9E18 |
FWHM | <350arcsec | |
Ra | ≤0.3nm | |
Package | Packaged in a class 100 clean room environment, under a nitrogen atmosphere |
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We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
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