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JDCD03-002-001 4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤0.3/cm2 Resistivity≥1E9Ω·cm for power and microwave devices
Overview
SiC has higher thermal conductivity than GaAs or Si meaning that SiC devices can theoretically operate at higher power densities than either GaAs or Si. Higher thermal conductivity combined with wide band gap and high critical field give SiC semiconductors an advantage when high power is a key desirable device feature.
Currently silicon carbide (SiC) is widely used for high power applications. SiC is also used as a substrate for epitaxial growth of GaN for even higher power devices.
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4inch 4H-SiC Semi-insulating substrate |
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| Product performance | P level | D level | |
| Crystal form | 4H | ||
| Polytypic | Not allow | Area≤5% | |
| Micropipe Densitya | ≤0.3/cm2 | ≤5/cm2 | |
| Six square empty | Not allow | Area≤5% | |
| Hexagon surface hybrid crystal | Not allow | Area≤5% | |
| wrappage a | Area≤0.05% | N/A | |
| Resistivity | ≥1E9Ω·cm | ≥1E5Ω·cm | |
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(0004) XRDHalf height width of rocking curve (FWHM) |
≤45Arcsecond |
N/A |
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| Diameter | 100.0mm+0.0/-0.5mm | ||
| Surface orientation | {0001}±0.2° | ||
| Length of main reference edge |
32.5 mm ± 2.0 mm
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| Length of secondary reference edge | 18.0 mm ± 2.0 mm | ||
| Main reference plane orientation | parallel<11-20> ± 5.0˚ | ||
| Secondary reference plane orientation | 90 ° clockwise to the main reference plane ˚ ± 5.0 ˚, Si face up | ||
| surface preparation | C-Face: Mirror Polishing, Si-Face: Chemical Mechanical Polishing (CMP) | ||
| The edge of the wafer | angle of chamfer | ||
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Surface roughness(5μm×5μm)
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Si face Ra＜0.2 nm
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| thickness |
500.0±25.0μm
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| LTV(10mm×10mm)a |
≤2µm
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≤3µm
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| TTVa |
≤6µm
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≤10µm
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| Bowa |
≤15µm
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≤30µm
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| Warpa |
≤25µm
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≤45µm
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| Broken edge / gap | Collapse edges of a length and a width of 0.5mm are not allowed | ≤2 and each length and width of 1.0mm | |
| scratcha | ≤4,And the total length is 0.5 times the diameter | ≤5 ,And the total length is 1.5 times the diameter | |
| flaw | not allow | ||
| pollution | not allow | ||
| Edge removal |
3mm |
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Remark: 3mm edge exclusion is used for the items marked with a.
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.